High-Purity Aluminum Sec-Butoxide: Electronic-Grade Precursor for Advanced Thin Films & Nanomaterials

The Pinnacle of Precursor Purity for Next-Generation Microelectronics and Nanotechnology

In the fabrication of cutting-edge semiconductor devices, optical coatings, and performance-critical nanomaterials, the purity of the starting material is not just a specification—it is the determinant of device yield, reliability, and ultimate performance limits. Aogochem High-Purity Aluminum Sec-Butoxide is engineered to meet these exacting demands. Representing the electronic-grade variant of this versatile aluminum alkoxide, it is subjected to advanced purification and rigorous analytical control to achieve exceptionally low levels of metallic and anionic impurities. This ultra-high purity makes it the precursor of choice for Atomic Layer Deposition (ALD) and Metal-Organic Chemical Vapor Deposition (MOCVD) processes, where it is used to deposit high-quality, conformal aluminum oxide (Al₂O₃) thin films as gate dielectrics, encapsulation layers, and diffusion barriers. Beyond thin films, its controlled hydrolysis characteristics are leveraged in sol-gel synthesis to produce defect-free, nano-structured alumina with unparalleled consistency for advanced catalysts, laser ceramics, and optical components. For industries where material perfection drives innovation, Aogochem provides the foundational chemical integrity required to turn advanced designs into manufacturable reality.

Technical Specifications & Ultra-Purity Standards

This product is defined by its stringent impurity controls and consistent performance parameters tailored for sensitive deposition and synthesis processes.

Core Physical & Chemical Properties:

• Chemical Formula: Al[OCH(CH₃)C₂H₅]₃

• CAS Number: 2269-22-9

• Appearance: Colorless to pale yellow liquid. Often supplied in specially passivated containers or as a standardized solution in ultra-dry, high-purity sec-butanol or an inert solvent.

• Purity (Al(OsBu)₃ basis): ≥ 99.999% (5N) grade available, with standard high-purity grade at ≥ 99.9% (3N).

• Critical Impurity Levels (Typical, by ICP-MS):

• Alkali & Alkaline Earth Metals (Na, K, Ca, Mg): < 1 ppm each

• Heavy Metals (Fe, Ni, Cu, Cr, Zn): < 1 ppm each

• Chloride (Cl⁻): < 10 ppm

• Total Metallic Impurities: < 10 ppm (for 5N grade)

• Molecular Weight: 246.33 g/mol

• Density: ~0.967 g/cm³

• Solubility: Soluble in high-purity aromatic and hydrocarbon solvents (e.g., toluene, mesitylene). Highly reactive with protic solvents and moisture.

• Sensitivity: Extremely moisture-sensitive and air-sensitive. Decomposes upon contact with water or humid air.

Key Performance Differentiators:

• Optimal Vapor Pressure & Thermal Stability: Engineered to provide consistent and efficient vapor delivery in ALD/MOCVD systems, with clean decomposition pathways that minimize carbon incorporation in the deposited film.

• Controlled, Reproducible Hydrolysis: The high purity ensures predictable and repeatable reaction kinetics in sol-gel synthesis, leading to homogeneous colloidal sols and gels essential for high-quality ceramics and coatings.

• Batch-to-Batch Consistency: Rigorous production and analytical protocols guarantee that every shipment meets the same stringent specifications, which is critical for stable semiconductor fabrication and R&D processes.

Critical Applications in High-Tech Industries

1. Thin Film Deposition for Semiconductor & Optoelectronics (Primary Application):

• Use: As a high-purity aluminum source in ALD and MOCVD reactors.

• Process: The precursor is vaporized and alternately pulsed with an oxidant (e.g., H₂O, O₃, O₂ plasma) to grow Al₂O₃ films atomically layer by layer.

• Benefit: Enables the deposition of high-k dielectric layers with excellent uniformity, low leakage current, and high breakdown strength for transistors, memory devices, and MEMS. Also used for surface passivation in photovoltaics and protective barrier layers on flexible electronics.

2. Synthesis of Advanced Ceramic Nanomaterials via Sol-Gel:

• Use: As the molecular precursor for synthesizing ultra-high-purity, sub-100 nm alumina powders and porous structures.

• Benefit: The absence of impurities prevents abnormal grain growth and unwanted phase formation during sintering. This is crucial for producing transparent polycrystalline alumina for armor and optics, high-surface-area catalyst supports for demanding reactions, and fine abrasive grains for precision polishing.

3. Precursor for Specialty Inorganic Polymers & Hybrid Materials:

• Use: In the synthesis of polyaluminoxanes and as a cross-linking agent or modifier in organic-inorganic hybrid material systems.

• Benefit: Imparts thermal stability and hardness to polymers or creates novel material architectures for specialized applications.

4. Research & Development in Advanced Materials:

• Use: As a benchmark, high-quality starting material in academic and industrial R&D labs exploring new functional oxides, nanocomposites, and deposition processes.

• Benefit: Eliminates precursor variability as a factor, allowing researchers to focus on process and property innovation.

Why Source High-Purity Aluminum Sec-Butoxide from Aogochem?

• Dedicated to Semiconductor & Advanced Material Standards: Our production and quality systems are aligned with the needs of the microelectronics and premium ceramics industries.

• Comprehensive Analytical Certification: Each batch is accompanied by a detailed Certificate of Analysis (CoA) from advanced techniques like ICP-MS, ion chromatography, and Karl Fischer titration, providing full traceability and confidence.

• Secure, Specialized Packaging: We understand the critical need to preserve purity during transport and storage. The product is packaged under inert atmosphere in stainless-steel cylinders, bubblers (for deposition tools), or septum-sealed bottles to prevent contamination.

• Technical Partnership for Process Integration: We collaborate with customers, providing technical data on vapor pressure curves and handling guidelines to support integration into specific ALD/CVD or synthesis processes.

Handling, Storage & Safety Protocols – Paramount Importance

WARNING: This is a highly pyrophoric, moisture-sensitive, and reactive material. Improper handling can lead to fire, violent reactions, and product degradation.

• Handling: Must be handled exclusively under an inert atmosphere (Argon or Nitrogen purity >99.999%) using a glovebox or validated Schlenk line techniques. All transfer lines and containers must be thoroughly purged and dry.

• Storage: Store in the original, unopened, inert-packed container in a cool, dry, ventilated area dedicated to flammable and air-sensitive materials. Storage temperature recommendations should be strictly followed.

• Delivery Systems: For ALD/CVD use, specialized heated delivery systems (bubblers) with precise temperature control are required.

• Safety: Conduct a full risk assessment. Always consult and follow the Material Safety Data Sheet (MSDS/SDS). Use appropriate PPE (fire-resistant lab coat, face shield, insulated gloves) and have proper fire suppression (Class D extinguisher for metal fires) and spill kits readily available.

Enable your frontier technology with a foundation of chemical excellence. Contact Aogochem's electronic materials team to discuss your specific application, request a comprehensive specification package and CoA, or inquire about custom packaging solutions for your deposition tool or process.